SKU
SCHTP

Silicon Carbide High Temperature Plate

Price $76.00

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Silicon Carbide High Temperature Plate

Silicon Carbide (SiC) plates

Specifications

SiC Content (%)

>99

Max temperature

1650°C

Density (g/cm³)

2.65-2.75

Apparent Porosity (%)

<15

Bending Strength at Normal Temperature (20°C) (Mpa)

90-100

Bending Strength at High Temperature (1200°C) (Mpa)

100-110

Operating Temperature (°C)

≤1650

Coefficient of Thermal Expansion (20-1200°C) (10⁻⁶/°C)

<4.8

Thermal Conductivity (1200°C) (W/M.K)

35-36

Hardness (20°C) (KG/MM²)

1800-2000

Overview

Silicon Carbide High Temperature Plate

Silicon Carbide (SiC) plates

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