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Home Silicon Carbide High Temperature Plate
Silicon Carbide High Temperature Plate Silicon Carbide High Temperature PlateSilicon Carbide (SiC) plates
Specifications
SiC Content (%)
>99
Max temperature
1650°C
Density (g/cm³)
2.65-2.75
Apparent Porosity (%)
<15
Bending Strength at Normal Temperature (20°C) (Mpa)
90-100
Bending Strength at High Temperature (1200°C) (Mpa)
100-110
Operating Temperature (°C)
≤1650
Coefficient of Thermal Expansion (20-1200°C) (10⁻⁶/°C)
<4.8
Thermal Conductivity (1200°C) (W/M.K)
35-36
Hardness (20°C) (KG/MM²)
1800-2000
Overview Silicon Carbide High Temperature PlateSilicon Carbide (SiC) plates
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